Formation of High Flux Parallel Neutral Beam Using a Three Grid System of Ion Beam during Low Angle Forward Reflection of Ions

Abstract:

The energy and the flux of the ion gun with a three-grid system was compared with those of the ion gun with a two-grid system and the characteristics of the neutral beam sources composed of the ion guns with different grid systems and a reflector for the low angle reflection of the ions were investigated. By using the three-grid system instead of the two-grid system and by applying higher negative voltage to the 2nd grid, a higher ion flux without changing the ion energy could be obtained for the ion gun of the neutral beam source. The three-grid ion gun system generated higher neutral beam fluxes compared to the two-grid ion gun system. This result was confirmed by measuring the etch rates of Si and GaAs with Ar and fluorine neutral beam. Also, using the neutral beam source with the three-grid ion gun, 35nm-width Si patterns could be etched vertically by CF4 gas indicating the formation of a parallel neutral beam.

• Periodical: Solid State Phenomena (Volumes 124-126)
• Pages: 275-278
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.124-126.275
• Online since: June 2007
• Authors: Byoung Jae Park, Kyoung Seok Min, Sang Duk Park, Jeong Woon Bae, Oleksiy Vozniy, Geun Young Yeom
• Keywords: Grid System, High Beam Flux, Low Energy, Nano-Scale Etch, Neutral Beam Etching

References

[1] M. G. Kang, K. T. Kim, D. P. Kim and C. I. Kim, J. Korean Phys. Soc. 41, 445 (2002).

[2] T. Yunogami, K. Yokogawa and T. Mizutani, J. Vac. Sci. Technol. A 13 (3), 952 (1995).

[3] S. R. Leone, J. Appl. Phys. 34, 2073 (1995).

[4] S. Panda and D. J. Economou, and L. Chen, J. Vac. Sci. Technol. A 19, 398 (2001).

[5] H. R. Kaufman, AIAA Journal 15, 1025 (1977).

[6] Yukio Hayakawa and Shoji Kitamura, Journal of Propulsion and Power 15 (3), 377 (1999).

[7] D. H. Lee, M. J. Chung, S. D. Park, and G. Y. Yeom, Jpn. J. Appl. Phys. Lett. 41, 1412 (2002).