ITO Contact Properties with Amorphous Silicon for AM-OLED Application

Abstract:

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In order to improve long term stability of a-Si:H TFT for AM-OLED application a new driving method compensating Vth shift requires a new device structure of which hole injection is enhanced. ITO film was investigated for the hole injection material because it is essential material for display devices and has high work function favorable for hole injection. From I-V characteristics of TFTs with two types of source and drain material, i.e. Cr and ITO, the contact properties were measured and compared. Although electron injection property of ITO was worse than Cr, hole injection property was comparable to that of Cr.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

423-426

DOI:

10.4028/www.scientific.net/SSP.124-126.423

Citation:

J. H. Jeon et al., "ITO Contact Properties with Amorphous Silicon for AM-OLED Application", Solid State Phenomena, Vols. 124-126, pp. 423-426, 2007

Online since:

June 2007

Keywords:

Cd

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Price:

$35.00

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