Microstructure and Electrical Properties of ITO Films Deposited Using Various ITO Targets by Magnetron Sputtering
Indium Tin Oxide (ITO) films were deposited on non-alkali glass substrate by magnetron sputtering using commercial ITO target (target A) and improved ITO target (target B). Depositions were carried out at total gas pressure (Ptot) of 0.5 Pa, substrate temperature (Ts) of RT ~ 300 °C, oxygen flow ratio [O2/(O2+Ar)] of 0 ~ 1.0% and dc power of 100W. Target B showed relatively higher stability in film resistivity with increasing sputtering time, i.e., erosion ratio of target surface. Optimum oxygen ratio to obtain the lowest resistivity was decreased with increasing substrate temperature. The lowest resistivity was 1.06x10-4 6cm for the film deposited using target B at O2/(O2+Ar) ratio of 0.05% and at Ts =300 °C.
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
J. H. Park et al., "Microstructure and Electrical Properties of ITO Films Deposited Using Various ITO Targets by Magnetron Sputtering", Solid State Phenomena, Vols. 124-126, pp. 431-434, 2007