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Microstructure and Electrical Properties of ITO Films Deposited Using Various ITO Targets by Magnetron Sputtering

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Abstract:

Indium Tin Oxide (ITO) films were deposited on non-alkali glass substrate by magnetron sputtering using commercial ITO target (target A) and improved ITO target (target B). Depositions were carried out at total gas pressure (Ptot) of 0.5 Pa, substrate temperature (Ts) of RT ~ 300 °C, oxygen flow ratio [O2/(O2+Ar)] of 0 ~ 1.0% and dc power of 100W. Target B showed relatively higher stability in film resistivity with increasing sputtering time, i.e., erosion ratio of target surface. Optimum oxygen ratio to obtain the lowest resistivity was decreased with increasing substrate temperature. The lowest resistivity was 1.06x10-4 6cm for the film deposited using target B at O2/(O2+Ar) ratio of 0.05% and at Ts =300 °C.

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Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

431-434

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.431

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Online since:

June 2007

Authors:

Joon Hong Park, Sang Chul Lee, Jin Ho Lee, Pung Keun Song

Keywords:

Electrical Properties, ITO, Magnetron Sputtering, Transparent Conductive Oxide

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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