Uniform Poly-Si TFTs for AMOLEDs Using Field-Enhanced Rapid Thermal Annealing

Abstract:

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Polycrystalline Si thin film transistors (TFTs) have been fabricated through solid phase crystallization using field-enhanced rapid thermal annealing (FE-RTA) system. The system consists of inline furnace modules for preheating and cooling of the glass substrates and a process module for rapid radiative heating combined with alternating magnetic field induction. The FE-RTA system enables crystallization of amorphous Si at high throughputs without any glass damages. While the typical grain structures of poly-Si by FE-RTA are similar to those of solid phase crystallization, the residual amorphous Si and intragranular defects are reduced.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

447-450

DOI:

10.4028/www.scientific.net/SSP.124-126.447

Citation:

H. J. Kim "Uniform Poly-Si TFTs for AMOLEDs Using Field-Enhanced Rapid Thermal Annealing", Solid State Phenomena, Vols. 124-126, pp. 447-450, 2007

Online since:

June 2007

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Price:

$35.00

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