Uniform Poly-Si TFTs for AMOLEDs Using Field-Enhanced Rapid Thermal Annealing

Hyoung June Kim

doi:10.4028/www.scientific.net/SSP.124-126.447

Paper Titles

Microstructure and Electrical Properties of ITO Films Deposited Using Various ITO Targets by Magnetron Sputtering
p.431

Chemical Durability of Frits Used in Process of Plasma Display Panels
p.435

Properties of Polymer Light Emitting Diodes with Blue Color on ITO/Glass Substrates
p.439

Luminance Efficiency of a (La,Tb,Ce)PO₄:Eu Phosphor Layer Prepared with Binary Surface Active Organic Molecules
p.443

Uniform Poly-Si TFTs for AMOLEDs Using Field-Enhanced Rapid Thermal Annealing
p.447

Characteristics of Pentacene with Different Polymer Gate Insulators for Organic Thin-Film Transistors
p.451

The Effects of SiO, SiON on IZO Thin Film Deposited by DCMG Method
p.455

Synthesis and Fabrication of Novel Polymeric/Organic Materials for Micro/Nano-Scale Optical Printed Circuit Board and VLSI Photonic Integrated Circuit Application
p.459

Post-Annealing Effect of SiON Thin Film in Air
p.463

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Uniform Poly-Si TFTs for AMOLEDs Using Field-Enhanced Rapid Thermal Annealing

Abstract:

Polycrystalline Si thin film transistors (TFTs) have been fabricated through solid phase crystallization using field-enhanced rapid thermal annealing (FE-RTA) system. The system consists of inline furnace modules for preheating and cooling of the glass substrates and a process module for rapid radiative heating combined with alternating magnetic field induction. The FE-RTA system enables crystallization of amorphous Si at high throughputs without any glass damages. While the typical grain structures of poly-Si by FE-RTA are similar to those of solid phase crystallization, the residual amorphous Si and intragranular defects are reduced.