Uniform Poly-Si TFTs for AMOLEDs Using Field-Enhanced Rapid Thermal Annealing
Polycrystalline Si thin film transistors (TFTs) have been fabricated through solid phase crystallization using field-enhanced rapid thermal annealing (FE-RTA) system. The system consists of inline furnace modules for preheating and cooling of the glass substrates and a process module for rapid radiative heating combined with alternating magnetic field induction. The FE-RTA system enables crystallization of amorphous Si at high throughputs without any glass damages. While the typical grain structures of poly-Si by FE-RTA are similar to those of solid phase crystallization, the residual amorphous Si and intragranular defects are reduced.
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
H. J. Kim "Uniform Poly-Si TFTs for AMOLEDs Using Field-Enhanced Rapid Thermal Annealing", Solid State Phenomena, Vols. 124-126, pp. 447-450, 2007