Characteristics of Pentacene with Different Polymer Gate Insulators for Organic Thin-Film Transistors

Abstract:

We investigated the characteristics of pentacene thin films of different materials for gate insulators using atomic force microscope (AFM) and x-ray diffraction (XRD). The pentacene thin films are fabricated by evaporation on different polymer substrates. We used HMDS (Hexa Methyl Di Silazane), PVA (Poly Vinyl Alcohol) and PMMA (Poly Methyl Meth Acrylate) for the polymer substrates, on which pentacene is deposited at various substrate temperatures. The case of pentacene deposited on the PMMA has the largest grain size and least trap concentration. We also fabricated pentacene TFTs with the PMMA gate insulator. Pentacene TFTs with PMMA gate insulator, shows high field-effect mobility (ｕFET= 0.03 cm2/Vs) and large on/off current ratio (>105) and small threshold voltage (Vth= -6 V).

• Periodical: Solid State Phenomena (Volumes 124-126)
• Pages: 451-454
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.124-126.451
• Online since: June 2007
• Authors: Jung Min Kim, Hyun Jung Her, J.H. Yoon, Jae Wan Kim, Y.J. Choi, C.J. Kang, D. Jeon, Yong Sang Kim
• Keywords: Organic Thin-Film Transistor, Pentacene, Polymer Gate Insulators

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[10] -12.

[10] -11.

[10] -10.

[10] -9.

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[10] -7.

[10] -6.

[10] -5 VGS [V] -IDS [A].

[2] [4] [6] [8] [10] -(IDS x10-2) 1/2.