The Effects of SiO, SiON on IZO Thin Film Deposited by DCMG Method

Abstract:

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The thin films of SiO and SiON were deposited individually by the inclination opposite target type DC magnetron sputtering equipment onto the glass substrate. And it was deposited IZO(In2O3 (90wt.%) + ZnO(10wt.%)) on those films. The effects of SiO and SiON were investigated on properties of IZO thin films. AFM images of IZO thin film included SiON film were shown smoother surfaces than that included SiO film. Multi layers of IZO were shown good properties because it have high transmissivity. Resistivity is in inverse proportion to Mobility. If it deposited SiO and SiON, generate layer of change between two layers(SiO or SiON + Substrate). Layer of change influenced resistance because Oxygen content was more than single layer of IZO. In case of using PET substrate, it influenced stronger than Glass substrate for rigid gas permeable and osmosis.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

455-458

DOI:

10.4028/www.scientific.net/SSP.124-126.455

Citation:

S. H. Kim et al., "The Effects of SiO, SiON on IZO Thin Film Deposited by DCMG Method", Solid State Phenomena, Vols. 124-126, pp. 455-458, 2007

Online since:

June 2007

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Price:

$35.00

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