Relationship between Atmospheric Humidity and Watermark Formation in IPA Dry of Si Wafer after HF Clean

N. Kurumoto; Atsuro Eitoku; Katsuhiko Miya

doi:10.4028/www.scientific.net/SSP.145-146.91

Paper Titles

Particle Retention Mechanism of Filter in High Temperature Chemical
p.69

Improving Process Control for Copper Electroplating through Filter Membrane Optimization
p.73

Particle – Wafer Interactions in Semiaqueous Silicon Cleaning Systems
p.77

Drying of High Aspect Ratio Structures: A Comparison of Drying Techniques via Electrical Stiction Analysis
p.87

Relationship between Atmospheric Humidity and Watermark Formation in IPA Dry of Si Wafer after HF Clean
p.91

Complementary Metrology within a European Joint Laboratory
p.97

Highly Sensitive Detection of Inorganic Contamination
p.101

Trace Metallic Contamination Analysis on Wafer Edge and Bevel by TXRF and VPD-TXRF
p.105

Surface Potential Difference Imaging Applied to Wet Clean Monitoring
p.109

HomeSolid State PhenomenaSolid State Phenomena Vols. 145-146Relationship between Atmospheric Humidity and...

Relationship between Atmospheric Humidity and Watermark Formation in IPA Dry of Si Wafer after HF Clean

Abstract:

As the critical dimension of LSI continues to decrease, the surface tension of water and its effect on the formation of watermarks is becoming a significant problem. It is known that watermarks are easily generated when a silicon hydrophobic surface is dried in a wet cleaning process. Many studies about watermarks have been reported [1, 2]. Additionally if the rinse and dry steps were performed under an inert (nitrogen) ambient and the rinse water had low oxygen concentration, watermarks could be effectively avoided [3, 4].