Particle Retention Mechanism of Filter in High Temperature Chemical

Takuya Nagafuchi; Koji Chiba; Isamu Funahashi; Minako Inukai; Hiroaki Yamada; Kaori Umezawa; Hiroshi Tomita

doi:10.4028/www.scientific.net/SSP.145-146.69

Paper Titles

Applications of Electrostatic Spray Techniques to Surface Cleaning
p.51

Analyzing the Collapse Force of Narrow Lines Measured by Lateral Force AFM Using an Analytical Mechanical Model
p.55

Reduced Particle Removal Efficiency Upon Wafer Storage
p.61

Local Distribution of Particles Deposited on Patterned Surfaces
p.65

Particle Retention Mechanism of Filter in High Temperature Chemical
p.69

Improving Process Control for Copper Electroplating through Filter Membrane Optimization
p.73

Particle – Wafer Interactions in Semiaqueous Silicon Cleaning Systems
p.77

Drying of High Aspect Ratio Structures: A Comparison of Drying Techniques via Electrical Stiction Analysis
p.87

Relationship between Atmospheric Humidity and Watermark Formation in IPA Dry of Si Wafer after HF Clean
p.91

HomeSolid State PhenomenaSolid State Phenomena Vols. 145-146Particle Retention Mechanism of Filter in High...

Particle Retention Mechanism of Filter in High Temperature Chemical

Abstract:

Recently, the control of particles measured in the tens of nanometers has become indispensable for manufacturing semiconductor devices. In sulfuric acid - hydrogen peroxide mixture (SPM) processes, it is increasingly important to reduce particles on the wafer. A batch type re-circulation bath has been generally used with a fluoroplastic filter built into the equipment. The pore size of the filter used has gradually become smaller. The particle levels on the wafer have decreased after the filter was changed from a 100nm rating to a 30nm rating.