Some Recent Results on the 3C-SiC Structural Defects

Abstract:

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This work presents some recent results on the 3C-SiC structural defects, studied by Transmission Electron Microscopy (TEM). The samples studied were grown in several laboratories, using different methods. Commonly used methods for growth are Sublimation Epitaxy (SE), Physical Vapour Transport (PVT), Continuous Feed Physical Vapour Transport (CF-PVT), Chemical Vapour Deposition (CVD), and Liquid Phase Epitaxy (LPE). In all these methods, for both bulk and epitaxial layer growth, substrates from other polytypes are exploited like the common hexagonal polytypes 4H- and 6H-SiC or 3C-SiC seeds both in (111) and (100) orientation.

Info:

Periodical:

Solid State Phenomena (Volume 159)

Edited by:

Lilyana Kolakieva and Roumen Kakanakov

Pages:

39-48

DOI:

10.4028/www.scientific.net/SSP.159.39

Citation:

M. Marinova et al., "Some Recent Results on the 3C-SiC Structural Defects", Solid State Phenomena, Vol. 159, pp. 39-48, 2010

Online since:

January 2010

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$35.00

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