AlGaN/GaN Based Heterostructures for MEMS and NEMS Applications

Abstract:

With the increasing requirements for microelectromechanical systems (MEMS) regarding stability, miniaturization and integration, novel materials such as wide band gap semiconductors are receiving more attention. The outstanding properties of group III-nitrides offer many more possibilities for the implementation of new functionalities and a variety of technologies are available to realize group III-nitride based MEMS. In this work we demonstrate the application of these techniques for the fabrication of full-nitride MEMS. It includes a novel actuation and sensing principle based on the piezoelectric effect and employing a two-dimensional electron gas confined in AlGaN/GaN heterostructures as integrated back electrode. Furthermore, the actuation of flexural and longitudinal vibration modes in resonator bridges are demonstrated as well as their sensing properties.

• Periodical: Solid State Phenomena (Volume 159)
• Pages: 27-38
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.159.27
• Online since: January 2010
• Authors: Volker Cimalla, C. C. Röhlig, V. Lebedev, Oliver Ambacher, Katja Tonisch, Florentina Niebelschütz, Klemens Brueckner, Matthias A. Hein
• Keywords: Group-III Nitrides, Micro-Electromechanical System (MEMS), Piezoelectric Actuation, Resonator

References

[1] Gardner J W 1994 Microsensors: Principles and application (Chichester, UK: Wiley).

[2] Hsu T-R 2002 MEMS and Microsystems: Design and Manufacture (New York: McGraw-Hill).

[3] Lyshevski S E 2005 Nano- and Micro-Electromechanical Systems: Fundamentals of Nano- and Microengineering (Boca Raton, Florida: CRC Press).

DOI: 10.1201/9781315219288

[4] Varadan V K 2003 Proc. SPIE 5062 20.

[5] Korvink J G and Paul O (eds. ) 2006 MEMS: a practical guide to design, analysis and applications (Norwich, NY: Springer).

[6] Flik G, Eisenschmid H, Raudzis C, Schatz F, Schoenenborn W and Trah H-P 2002 Mater. Res. Soc. Symp Proc 687 B1. 1.

DOI: 10.1557/proc-687-b1.1

[7] Ekinci K L and Roukes M L 2005 Rev. Sci. Instrum. 76 061101.

[8] Jackson K M, Edwards R L, Dirras G F and Sharpe Jr. W N 2002 Mater. Res. Soc. Symp. Proc. 687 B6. 3.

[9] Edgar J H, Strite S, Akasaki I, Amano H, and Wetzel C (eds. ) 1999 Processing and Applications of Gallium Nitride and Related Semiconductors (E M I S Datareviews Series) (Institution of Electrical Engineers) London, UK.

[10] Ambacher O 1998 J. Phys. D: Appl. Phys. 31 2653.

[11] Ambacher O et al. 2002 J. Phys.: Condens. Matter. 14 3399.

[12] Eickhoff M et al 2003 Phys. Status Solidi (c) 0 (1908).

[13] Stutzmann M, Steinhoff G, Eickhoff M, Ambacher O, Nebel C E, Schalwig J, Neuberger R and Müller G 2002 Diam. Relat. Mater. 11 886.

DOI: 10.1016/s0925-9635(02)00026-2

[14] Pearton S J, Kang B S, Kim S, Ren F, Gila B P, Abernathy C R, Lin J and Chu S N G 2004 J. Phys.: Condens. Mater. 16 R961.

[15] Eickhoff M, Ambacher O, Krötz G and Stutzmann M 2001 J. Appl. Phys. 90 3383.

[16] Kang B S et al. J 2005 Appl. Phys. Lett. 86 253502.

[17] Kang B S et al. 2003 Appl. Phys. Lett. 83 4845.

[18] Zimmermann T, Neuburger M, Benkart P, Hernández-Guillén F J, Pietzka C, Kunze M, Daumiller I, Dadgar A, Krost A and Kohn E 2006 IEEE Electron Device Lett. 27 309.

DOI: 10.1109/led.2006.872918

[19] Brueckner K, Niebelschuetz F, Tonisch K, Michael S, Dadgar A, Krost A, Cimalla V, Ambacher O, Stephan R, and Hein M A, 2008 Appl. Phys. Lett. 93 173504.

DOI: 10.1063/1.3002296

[20] Zelenka J 1986 Piezoelectric Resonators and their applications (Amsterdam, Oxford, New York, Tokyo: Elsevier).

[21] DeVoe D L and Pisano A P 1997 J. Microelectromech. Syst. 6 266.

[22] Doppalapudi D, Mlcak R, Chan J, Tuller H L, Abell J, Li W and Moustakas T D 2004 Electrochem. Soc. Proc. 2004-06 287.

[24] Cimalla V, Pezoldt P, and Ambacher O, 2007 J. Phys. D: Appl. Phys. 40 6386.

[25] DeVoe D L 2001 Sens. Actuators A 88 236.

[26] Kouh T, Karabacak D, Kim D H and Ekinci K L 2005 Appl. Phys. Lett. 86 013106.

[27] Piazza G and Pisano A P 2007 Sens. Actuators A, doi: 10. 1016/j. sna. 2006. 12. 003.

[28] Elwenspoek M and Jansen H V 2004 Silicon Micromachining (Cambridge, UK: Cambridge University Press).

[29] Tonisch K, Cimalla V, Niebelschütz F, Romanus H, Eickhoff M, and Ambacher O, 2007 phys. stat. sol. (c) 7 2248.

DOI: 10.1002/pssc.200674813

[30] Tonisch K, Niebelschuetz F, Cimalla V, Romanus H, and Ambacher O, 2007 MRS Symp. Proc. 955 I16-03.

DOI: 10.1557/proc-0955-i16-03

[31] Stauden Th, Niebelschütz F, Tonisch K, Cimalla V, Ecke G, Haupt Ch, and Pezoldt J, 2008 Mater. Sci. Forum 600-603 651.

DOI: 10.4028/www.scientific.net/msf.600-603.651

[32] Tonisch K: Thesis, Technical University Ilmenau, (2009).

[33] Förster Ch, Cimalla V, Brueckner K, Lebedev V, Stephan R, Hein M and Ambacher O 2005 Phys. Status Solidi (a) 202 671.

DOI: 10.1002/pssa.200460471

[34] Tonisch K, Buchheim C, Niebelschütz F, Schober A, Gobsch G, Goldhahn R, Cimalla V, and Ambacher O., 2008 J. Appl. Phys. 104 084516.

DOI: 10.1063/1.3005885

[35] Niebelschütz F, Cimalla V, Tonisch K, Haupt Ch, Brückner K, Stephan H, Hein M E, and Ambacher O, 2008 phys. stat. sol. (c) 5 (1914).

DOI: 10.1002/pssc.200778424

[36] Niebelschütz F, Cimalla V, Brückner K, Stephan H, Tonisch K, Hein M A, and Ambacher O, 2008 Proc. IMechE Vol. 221 Part N: J. Nanoengineering and Nanosystems, 221 (N2) 59.

DOI: 10.1243/17403499jnn100

[37] Cimalla V, Niebelschütz F, Tonisch K, Foerster Ch, Brückner K, Cimalla I, Friedrich T, Pezoldt J, Stephan H, Hein M E, and Ambacher O, 2007 Sens. Actuat. B 126 24.

DOI: 10.1016/j.snb.2006.10.049

[38] Tonisch K, Cimalla V, Foerster Ch, Romanus H, Ambacher O, and Dontsov D, 2006 Sens. Actuat. A 132 658.

DOI: 10.1016/j.sna.2006.03.001

[39] K. Brueckner, Cimalla V, Niebelschütz F, Stephan H, Tonisch K, Ambacher O, Hein M A, 2007 J. Micromech. Microeng. 17 (2016).

DOI: 10.1088/0960-1317/17/10/013

[40] K. Brueckner et al., 2009 Proc. of the 22nd IEEE International Conference on Micro Electro Mechanical Systems, Sorrento, Italy, 2009, p.927.

[41] Ballantine D S, White R M, Martin S J, Ricco A J, Zellers E T, Frye G C, and Wohltjen H, Acoustic wave sensors, (Academic Press, 1st edn., San Diego, 1997), p.115.

DOI: 10.1016/b978-012077460-9/50001-0

[42] Bjurström J, Katardjiev I, and Yantchev V, 2005 Appl. Phys. Lett. 104 154103.

[43] Jiménez Riobóo R J, Rodríguez-Cañas E, Vila M, Prieto C, Calle F, Palacios T, Sánchez M A, Omnès O, Ambacher O, Assouar B, and Elmazria O, 2002 J. Appl. Phys. 92 6868.

DOI: 10.1063/1.1517728

[44] Brückner K, Cimalla V, Niebelschütz F, Stephan H, Tonisch K, Ambacher O, and Hein M A, 2007 6th IEEE Conference on Sensors October 28 - 31, 2007, Hyatt Regency Atlanta, Atlanta, Georgia, USA, 2007, p.1251.

DOI: 10.1109/icsens.2007.4388636

[45] Tonisch K, F. Will, Förster Ch, V. Cimalla, K. Brueckner, Hein M E, and Ambacher O, 2005 7. Dresdner Sensor-Symposium, Dresden, 12. -14. 12. 2005, Dresden, TUD Press, Dresden p.239.

[46] Wang J, Ren Z, and Nguyen C-T C, 2004 IEEE Trans. Ultrason. Ferroelectr. Freq. Control, 51, 1607.

[47] Lee J-E Y, Zhu Y, and Seshia A A, 2008 J. Micromech. Microeng., 18 064001.