TEM Investigation of the 3C/6H-SiC Transformation Interface in Layers Grown by Sublimation Epitaxy
In the present work Conventional and High Resolution Transmission Electron Microscopy has been used to examine the structure and types of interfaces between 3C-SiC and 6H-SiC for samples grown by Sublimation Epitaxy. The layers were grown on on-axis 6H-SiC substrates at different temperature gradients. The changed growth conditions influence on the nucleation of 3C-SiC on the 6H-SiC substrates and their competition with nucleation of 6H-SiC islands. Three specific types of 3C/6H-SiC interfaces were observed and the implications of these observations are discussed.
Danuta Stróż & Małgorzata Karolus
M. Marinova et al., "TEM Investigation of the 3C/6H-SiC Transformation Interface in Layers Grown by Sublimation Epitaxy", Solid State Phenomena, Vol. 163, pp. 97-100, 2010