TEM Investigation of the 3C/6H-SiC Transformation Interface in Layers Grown by Sublimation Epitaxy

Abstract:

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In the present work Conventional and High Resolution Transmission Electron Microscopy has been used to examine the structure and types of interfaces between 3C-SiC and 6H-SiC for samples grown by Sublimation Epitaxy. The layers were grown on on-axis 6H-SiC substrates at different temperature gradients. The changed growth conditions influence on the nucleation of 3C-SiC on the 6H-SiC substrates and their competition with nucleation of 6H-SiC islands. Three specific types of 3C/6H-SiC interfaces were observed and the implications of these observations are discussed.

Info:

Periodical:

Solid State Phenomena (Volume 163)

Edited by:

Danuta Stróż & Małgorzata Karolus

Pages:

97-100

DOI:

10.4028/www.scientific.net/SSP.163.97

Citation:

M. Marinova et al., "TEM Investigation of the 3C/6H-SiC Transformation Interface in Layers Grown by Sublimation Epitaxy", Solid State Phenomena, Vol. 163, pp. 97-100, 2010

Online since:

June 2010

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Price:

$35.00

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