TEM Investigation of the 3C/6H-SiC Transformation Interface in Layers Grown by Sublimation Epitaxy

Maya Marinova; Alkyoni Mantzari; Milena Beshkova; Mikael Syväjärvi; Rositza Yakimova; Efstathios K. Polychroniadis

doi:10.4028/www.scientific.net/SSP.163.97

Paper Titles

The Characteristic of the Multilayer Thin Films by X-Ray Reflectometry Method
p.80

The Study of Zink-Nickel Composite Coatings after Annealing
p.84

Structure of Antimony Sulfoiodide Ultrasonically Prepared in Carbon Nanotubes
p.88

A Combined Microscopical and XRD Study of Zinc Coatings
p.93

TEM Investigation of the 3C/6H-SiC Transformation Interface in Layers Grown by Sublimation Epitaxy
p.97

Structure and Properties of the Melt-Spun Fe₄₁Ni₃₉P₁₀Si₅B₅ Alloy Heat Treated at Elevated Temperatures
p.101

Characterization of β and Mg₄₁Nd₅ Equilibrium Phases in Elektron 21 Magnesium Alloy after Long-Term Annealing
p.106

Microstructure Formation in Austenitic Steel after Compression with Oscillatory Torsion Test
p.110

Structural Stability of Cu Processed by Severe Plastic Deformation Method
p.114

HomeSolid State PhenomenaSolid State Phenomena Vol. 163TEM Investigation of the 3C/6H-SiC Transformation...

TEM Investigation of the 3C/6H-SiC Transformation Interface in Layers Grown by Sublimation Epitaxy

Abstract:

In the present work Conventional and High Resolution Transmission Electron Microscopy has been used to examine the structure and types of interfaces between 3C-SiC and 6H-SiC for samples grown by Sublimation Epitaxy. The layers were grown on on-axis 6H-SiC substrates at different temperature gradients. The changed growth conditions influence on the nucleation of 3C-SiC on the 6H-SiC substrates and their competition with nucleation of 6H-SiC islands. Three specific types of 3C/6H-SiC interfaces were observed and the implications of these observations are discussed.