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Recent Progress in the Understanding of Si-Nanostructures Formation in a-SiN_x:H Thin Film for Si-Based Optoelectronic Devices

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There has been a rapidly increasing interest in the synthesis and characterization of Si- nanostructures embedded in a dielectric matrix, as it can lead to energy-efficient and cost-effective Complementary Metal-Oxide-Semiconductor (CMOS)-compatible Si-based light sources for optoelectronic integration. In the present contribution, first an overview of the SiOx as a dielectric matrix and its limitations are discussed. We then review the literature on hydrogenated amorphous silicon nitride (a-SiNx:H) as a dielectric matrix for Si-nanostructures, which have been carried out using silane (SiH4) and ammonia (NH3) as the reactant gases. Our studies demonstrate that the least amount of hydrogen in the as-deposited (ASD) a-SiNx:H films not only allows in-situ formation of Si-nanostructures but also stabilizes silicon nitride (Si3N4) phase. The recent advances made in controlling the shape and size of Si-nanostructures embedded in a-SiNx:H matrix by swift heavy ion (SHI) irradiation are briefly discussed.

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Solid State Phenomena (Volume 171)

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https://doi.org/10.4028/www.scientific.net/SSP.171.1

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May 2011

Authors:

Sarab Preet Singh, Pankaj Srivastava

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Elastic Recoil Detection Analysis (ERDA), Hydrogenated Amorphous Silicon Nitride, Si-Nanostructures, Swift Heavy Ion Irradiation, X-Ray Photoelectron Spectroscopy (XPS)

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