Study of Silicon Nanoparticles Formation in Silicon Nitride

Jacek Ratajczak; Krzysztof Hejduk; Marek Lipiński; Tadeusz Piotrowski; Mariusz Płuska; Adam Łaszcz; Andrzej Czerwiński

doi:10.4028/www.scientific.net/SSP.186.66

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HomeSolid State PhenomenaSolid State Phenomena Vol. 186Study of Silicon Nanoparticles Formation in...

Study of Silicon Nanoparticles Formation in Silicon Nitride

Abstract:

We present results of the study on the silicon nanoparticles formation in multilayer silicon nitride structures. These structures consist of pairs of stoichiometric silicon nitride dielectric layers (SiN_x) and silicon rich nitride layers (SRN). Silicon nanocrystals precipitate from the SRN layer during annealing at high temperatures (1000 °C or 1100 °C). High resolution transmission electron microscopy has been applied for investigation of the nanocrystals formation. Surface photovoltage spectroscopy technique was used for the spectral characterization of prepared structures

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Periodical:

Solid State Phenomena (Volume 186)

Pages:

66-69

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.186.66

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Online since:

March 2012

Authors:

Jacek Ratajczak, Krzysztof Hejduk, Marek Lipiński, Tadeusz Piotrowski, Mariusz Płuska, Adam Łaszcz, Andrzej Czerwiński

Keywords:

CVD, Photovoltage, Quantum Dot (QD), Silicon Nanocrystals, Silicon Nitride, TEM

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