Study of Oxides Formed in HfO2/Si Structure for High-k Dielectric Applications

Adam Łaszcz; Andrzej Czerwiński; Jacek Ratajczak; Andrzej Taube; Sylwia Gierałtowska; Anna B. Piotrowska; Jerzy Kątcki

doi:10.4028/www.scientific.net/SSP.186.78

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HomeSolid State PhenomenaSolid State Phenomena Vol. 186Study of Oxides Formed in HfO2/Si Structure for...

Study of Oxides Formed in HfO₂/Si Structure for High-k Dielectric Applications

Abstract:

Transmission electron microscopy (TEM) techniques were used for characterization of annealing (400, 600 and 800 °C) influence on the structural properties of the HfO₂ film (45 nm thick) deposited on Si substrate. Such structures are considered as high-k dielectric materials for application in novel semiconductor devices. The studies showed that independently of the annealing temperature a very thin and flat amorphous layer is formed between HfO₂ layer and Si substrate. This result was also found in the non-annealed sample. EDXS examination confirmed that the stoichiometry for the hafnium oxide layer in each sample corresponds to 1:2 for Hf:O (i.e. to HfO₂). TEM images revealed differences in the microstructure of HfO₂ layers in annealed samples, however the layers have similar thickness and interface roughness in all studied samples.

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Periodical:

Solid State Phenomena (Volume 186)

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78-81

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.186.78

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Online since:

March 2012

Authors:

Adam Łaszcz, Andrzej Czerwiński, Jacek Ratajczak, Andrzej Taube, Sylwia Gierałtowska, Anna B. Piotrowska, Jerzy Kątcki

Keywords:

Energy Dispersive X-Ray Spectroscopy Examination, Hafnium Oxide, High-k Dielectric Materials, Transmission Electron Microscopy Observation

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