Ni-Based Ohmic Contacts to Silicon Carbide Examined by Electron Microscopy

Marek Wzorek; Andrzej Czerwiński; Andrian V. Kuchuk; Jacek Ratajczak; Anna B. Piotrowska; Jerzy Kątcki

doi:10.4028/www.scientific.net/SSP.186.82

Paper Titles

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Ni-Based Ohmic Contacts to Silicon Carbide Examined by Electron Microscopy

Abstract:

Ni/Si multilayer contact structures to 4H-SiC after subsequent annealing steps are investigated with electron microscopy methods. After high temperature annealing step, specific defects in the contact structures are observed. The influence of phase transformations during annealings on the morphology on the contacts is discussed and the explanation of formation mechanism of voids within contact layer is proposed.

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Periodical:

Solid State Phenomena (Volume 186)

Pages:

82-85

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.186.82

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Online since:

March 2012

Authors:

Marek Wzorek, Andrzej Czerwiński, Andrian V. Kuchuk, Jacek Ratajczak, Anna B. Piotrowska, Jerzy Kątcki

Keywords:

Kirkendall Effect, Nickel Ni, Ohmic Contact, Silicon Carbide (SiC), Transmission Electron Microscopy (TEM), Void

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