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Structural and Chemical Characterization of Al(Ga)N/GaN Quantum Well Structures Grown by Plasma Assisted Molecular Beam Epitaxy

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Abstract:

Growth of high quality GaN/AlN heterostructures by plasma assisted molecular beam epitaxy (PAMBE) is possible with excess of Ga on the surface. During growth of AlN this additional Ga acts as surfactant and improves mobility of the Al adatoms on the growing surface, at the possible cost of Ga segregation and creation of mixed AlGaN interlayer. Scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) were used to determine chemical composition of high crystallographic quality GaN-AlN multilayer structure. It was shown that segregation occurs at AlN-GaN heterointerfaces, while GaN-AlN interfaces have abrupt stepwise change of the chemical composition. HRTEM results show creation of trench defects at the periphery of growing AlN islands in the case of nonoptimized growth.

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Periodical:

Solid State Phenomena (Volume 186)

Pages:

70-73

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.186.70

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Online since:

March 2012

Authors:

Jolanta Borysiuk, Piotr Dłużewski, Zbigniew Zytkiewicz, Marta Sobańska, Kamil Kłosek, Bolesław Łucznik

Keywords:

EELS, GaN/AlN, Heterostructure, STEM

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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