Ultra-Fast In-Line Inspection for 3D SIC TSV Line - Bonding & Thinning

Pierre Yves Guittet; Lars Markwort; Greg Savage; Sandip Halder; Anne Jourdain

doi:10.4028/www.scientific.net/SSP.187.259

Paper Titles

TiN Metal Hardmask Etch Residue Removal on Advanced Porous Low-k and Cu Device with Corner Rounding Scheme
p.241

Improved Cleaning Process for Etch Residue Removal in an Advanced Copper/Low-k Device without the Use of DMAC (Dimethylacetamide)
p.245

Aqueous Fluoride Residue Removers for 32 nm and beyond Copper Ultra Low-κ Technologies
p.249

Wet Clean Induce Pattern Collapse Mechanism Study
p.253

Ultra-Fast In-Line Inspection for 3D SIC TSV Line - Bonding & Thinning
p.259

Cleaning Requirement in the Thinning Module for 3D-Stacked IC (3D-SIC) Integration
p.265

High Efficiency Single Wafer Cleaning for Wafer Bonding-Based 3D Integration Applications
p.269

Indirect Ultra-Pure Water Metals Analysis by Extended Ion Exchange on a Silica Surface
p.275

Production of High Purity Functional Water at Point-of-Use for Advanced Mask Cleaning Processes
p.279

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Ultra-Fast In-Line Inspection for 3D SIC TSV Line - Bonding & Thinning

Abstract:

The number of consumer products requiring 3D stacked IC (3D SIC) is growing, and volume output is expected to start between 2011 and 2013. R&D centers and production sites are addressing the remaining obstacles to production for these new technologies. To enable fast production ramp, there is urgency to get enablers in place, including advanced, dedicated process control methods. Using an innovative high throughput inspection technology, we show ways to control future 3D SIC production lines, getting data from 100% of the wafers and providing defect classification for yield management.