TiN Metal Hardmask Etch Residue Removal on Advanced Porous Low-k and Cu Device with Corner Rounding Scheme

Hua Cui; Martine Claes; Samuel Suhard

doi:10.4028/www.scientific.net/SSP.187.241

Paper Titles

ESH Friendly Solvent for Stripping Positive and Negative Photoresists in 3D-Wafer Level Packaging and 3D-Stacked IC Applications
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Tungsten Oxidation Kinetic after Wet Cleaning: XPS and ToF-SIMS Characterization
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A Comparison between BTA and Amidoximes and their Interactions with Copper Surfaces
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Electrochemical, Physical, and Electrical Characterization of Two Clean Solutions for Cu PCMP Clean
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TiN Metal Hardmask Etch Residue Removal on Advanced Porous Low-k and Cu Device with Corner Rounding Scheme
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Improved Cleaning Process for Etch Residue Removal in an Advanced Copper/Low-k Device without the Use of DMAC (Dimethylacetamide)
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Aqueous Fluoride Residue Removers for 32 nm and beyond Copper Ultra Low-κ Technologies
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Wet Clean Induce Pattern Collapse Mechanism Study
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Ultra-Fast In-Line Inspection for 3D SIC TSV Line - Bonding & Thinning
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HomeSolid State PhenomenaSolid State Phenomena Vol. 187TiN Metal Hardmask Etch Residue Removal on...

TiN Metal Hardmask Etch Residue Removal on Advanced Porous Low-k and Cu Device with Corner Rounding Scheme

Abstract:

A novel wet cleaning formulation approach was developed with a TiN etch rate of more than 30 Å/min at room temperature and more than 100 Å/min at 50°C. The chemicals are compatible with Cu and low-k materials, and are suitable for Cu dual damascene interconnect 28 nm and smaller technology node applications. The chemicals offer a route to in situ controlled TiN pullback or even complete removal of the TiN mask during the cleaning process in single wafer tool applications. The chemicals do not contain NH₄OH or TMAH and so are very user-friendly.

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Periodical:

Solid State Phenomena (Volume 187)

Pages:

241-244

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.187.241

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Online since:

April 2012

Authors:

Hua Cui, Martine Claes, Samuel Suhard

Keywords:

Cu/Low-k, Etch Residues Removals, Metal Hard Mask, Sidewall Polymer, TiN Etch

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