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Electrochemical, Physical, and Electrical Characterization of Two Clean Solutions for Cu PCMP Clean
Abstract:
Cu post-CMP clean is important to keep both Cu and low-k dielectric clean after polishing. In this paper, two Cu post-CMP clean solutions are analyzed in electrochemical, physical and electrical characterizations, based on the material and integration scheme of imec 65nm platform. It is shown that the combination of these two PCMP clean solutions can achieve both reasonable cleaning efficiencies and reliable low-k dielectric lifetime.
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235-239
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Online since:
April 2012
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© 2012 Trans Tech Publications Ltd. All Rights Reserved
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