A Comparison between BTA and Amidoximes and their Interactions with Copper Surfaces

S. Jethwa; D.W. Tee; S.M. Francis; F. Grillo; N.V. Richardson; Chris Reid; Larry McGhee; W.M. Lee

doi:10.4028/www.scientific.net/SSP.187.231

Paper Titles

A Descum Review for Cleaning Surfaces in Polymer Embedded Process Flows
p.215

Influence of Photoresist and BARC Selection on the Efficiency of a Post-Etch Wet Strip in BEOL Applications
p.219

ESH Friendly Solvent for Stripping Positive and Negative Photoresists in 3D-Wafer Level Packaging and 3D-Stacked IC Applications
p.223

Tungsten Oxidation Kinetic after Wet Cleaning: XPS and ToF-SIMS Characterization
p.227

A Comparison between BTA and Amidoximes and their Interactions with Copper Surfaces
p.231

Electrochemical, Physical, and Electrical Characterization of Two Clean Solutions for Cu PCMP Clean
p.235

TiN Metal Hardmask Etch Residue Removal on Advanced Porous Low-k and Cu Device with Corner Rounding Scheme
p.241

Improved Cleaning Process for Etch Residue Removal in an Advanced Copper/Low-k Device without the Use of DMAC (Dimethylacetamide)
p.245

Aqueous Fluoride Residue Removers for 32 nm and beyond Copper Ultra Low-κ Technologies
p.249

HomeSolid State PhenomenaSolid State Phenomena Vol. 187A Comparison between BTA and Amidoximes and their...

A Comparison between BTA and Amidoximes and their Interactions with Copper Surfaces

Abstract:

The use of integration of copper interconnects in semiconductor devices has greatly advanced the development of integrated circuits and has enabled ever higher device densities. Unfortunately the oxides of copper are poorly suited to semiconductor manufacture. As Cu (I) and Cu (II) oxides are not self-limiting they can pose serious issues from a cleaning and queue time management perspective. In both post-etch and post-CMP cleaning applications it is critical that both types of Cu oxide are removed without damage to either Cu or the dielectric. With the most advanced sub 32nm nodes simply removing the oxides is not sufficient; their re-growth must also be prevented using surface passivation.