Tungsten Oxidation Kinetic after Wet Cleaning: XPS and ToF-SIMS Characterization

Francesco Pipia; Annamaria Votta; Enrica Ravizza; Simona Spadoni; S. Grasso; S. Borsari; C. Lazzari; Mauro Alessandri

doi:10.4028/www.scientific.net/SSP.187.227

Paper Titles

"Damage Free" Cleaning for Advanced BEOL Interconnections
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A Descum Review for Cleaning Surfaces in Polymer Embedded Process Flows
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Influence of Photoresist and BARC Selection on the Efficiency of a Post-Etch Wet Strip in BEOL Applications
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ESH Friendly Solvent for Stripping Positive and Negative Photoresists in 3D-Wafer Level Packaging and 3D-Stacked IC Applications
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Tungsten Oxidation Kinetic after Wet Cleaning: XPS and ToF-SIMS Characterization
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A Comparison between BTA and Amidoximes and their Interactions with Copper Surfaces
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Electrochemical, Physical, and Electrical Characterization of Two Clean Solutions for Cu PCMP Clean
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TiN Metal Hardmask Etch Residue Removal on Advanced Porous Low-k and Cu Device with Corner Rounding Scheme
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Improved Cleaning Process for Etch Residue Removal in an Advanced Copper/Low-k Device without the Use of DMAC (Dimethylacetamide)
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Tungsten Oxidation Kinetic after Wet Cleaning: XPS and ToF-SIMS Characterization

Abstract:

Tungsten importance in semiconductor manufacturing is renewed more and more due to its usage not only as metallization for plugs, but also in metal gates architectures. As the scaling down of the devices is becoming aggressive, the metal interfaces become more critical. Hence, a deeper understanding of the evolution of the W surface after wet cleaning processes is becoming increasingly more important.