Influence of Photoresist and BARC Selection on the Efficiency of a Post-Etch Wet Strip in BEOL Applications

Abstract:

All-wet processes are gaining a renewed interest for the removal of post-etch photoresist (PR) and Bottom AntiReflective Coating (BARC) in the back-end-of-line (BEOL) semiconductor manufacturing, as plasma ash, traditionally used to remove the PR and BARC layer after etch, cause damage to the low-k dielectric. This study investigates the modification of 193 nm post-etch PR and BARC layer by UV irradiation, that can be used as an intermediate step to enhance PR and BARC wet strip by O₃/H₂O.

• Periodical: Solid State Phenomena (Volume 187)
• Pages: 219-222
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.187.219
• Online since: April 2012
• Authors: Els Kesters, Marcel Lux, Joris Pittevils, Jonas Baeyens, Guy Vereecke, Christina Baerts, Denis Shamiryan, Herbert Struyf
• Keywords: BEOL, Bottom Antireflective Coating (BARC), Photoresist, Post-Etch Wet Strip

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