Aqueous Fluoride Residue Removers for 32 nm and beyond Copper Ultra Low-κ Technologies

Glen Westwood; Anatolio Pigliucci; Thomas Oszinda; Susanne Leppack; Matthias Schaller

doi:10.4028/www.scientific.net/SSP.187.249

Paper Titles

A Comparison between BTA and Amidoximes and their Interactions with Copper Surfaces
p.231

Electrochemical, Physical, and Electrical Characterization of Two Clean Solutions for Cu PCMP Clean
p.235

TiN Metal Hardmask Etch Residue Removal on Advanced Porous Low-k and Cu Device with Corner Rounding Scheme
p.241

Improved Cleaning Process for Etch Residue Removal in an Advanced Copper/Low-k Device without the Use of DMAC (Dimethylacetamide)
p.245

Aqueous Fluoride Residue Removers for 32 nm and beyond Copper Ultra Low-κ Technologies
p.249

Wet Clean Induce Pattern Collapse Mechanism Study
p.253

Ultra-Fast In-Line Inspection for 3D SIC TSV Line - Bonding & Thinning
p.259

Cleaning Requirement in the Thinning Module for 3D-Stacked IC (3D-SIC) Integration
p.265

High Efficiency Single Wafer Cleaning for Wafer Bonding-Based 3D Integration Applications
p.269

HomeSolid State PhenomenaSolid State Phenomena Vol. 187Aqueous Fluoride Residue Removers for 32 nm and...

Aqueous Fluoride Residue Removers for 32 nm and beyond Copper Ultra Low-κ Technologies

Abstract:

Mallinckrodt Baker, Inc. (MBI) has developed an aqueous fluoride-based cleaner (AFC1) that shows improved ultra-low k (ULK) and cobalt tungsten phosphide (CoWP) compatibility over dilute hydrofluoric acid (dHF) and a simple solvent based cleaner (SFC1). Performance and compatibility testing was performed with beaker tests at MBI and on 45 nm wafers by GLOBALFOUNDRIES. Our results indicate that AFC1 may be a good alternative to dHF for future Cu technologies.