The Influence of RTA on Deep States in Si-Implanted GaAs MESFET Structures Investigated by DLTS and ODLTS

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Periodical:

Solid State Phenomena (Volumes 19-20)

Edited by:

M. Kittler and H. Richter

Pages:

221-226

DOI:

10.4028/www.scientific.net/SSP.19-20.221

Citation:

F. Dubecky and T. Lalinsky, "The Influence of RTA on Deep States in Si-Implanted GaAs MESFET Structures Investigated by DLTS and ODLTS", Solid State Phenomena, Vols. 19-20, pp. 221-226, 1991

Online since:

January 1991

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$35.00

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