Paper Titles

Silicon Device Engineering by Intrinsic Point Defect Control
p.169

Defect Engineering in a High-Voltage Substrate Technology
p.175

Thermal Wafer Warpage and its Avoidance
p.181

Defects in Crystalline Silicon - History and Outlook
p.189

Defect Spectroscopy in Compound Semiconductors
p.195

Formation and Defect Structure of FeIn Pairs in Silicon
p.207

EPR Identification of Mn- or Cr-Acceptor Pairs in Silicon
p.215

The Influence of RTA on Deep States in Si-Implanted GaAs MESFET Structures Investigated by DLTS and ODLTS
p.221

Study of Electron and Hole Emission from Deep States in Undoped Semi-Insulating GaAs by PICTS and Photo-DLTS
p.227

HomeSolid State PhenomenaSolid State Phenomena Vols. 19-20Defect Spectroscopy in Compound Semiconductors

Defect Spectroscopy in Compound Semiconductors

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology IV

Info:

Periodical:

Solid State Phenomena (Volumes 19-20)

Pages:

195-206

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.19-20.195

Citation:

Cite this paper

Online since:

January 1991

Authors:

Hermann G. Grimmeiss, Mats Kleverman

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1991 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: