'New Donors' in Heat-Treated Cz-Si - What is Really New There?
p.229
p.229
The Thermal Acceptor in Nitrogen Doped Cz Silicon
p.235
p.235
On Carbon-Implantation Induced Donors in Silicon
p.241
p.241
A Search on the Identity of the Ev+0.34 eV C-Related Defect in p-Si
p.247
p.247
Simulation of Hydrogen Diffusion in n and p Type Silicon: Determination of Kinetic and Thermodynamic Parameters
p.253
p.253
Hydrogen Passivation of Grain Boundaries in Polysilicon: Computer Simulation
p.259
p.259
Modification of the Properties of Si Crystals Exposed to Atomic Hydrogen at High Temperatures
p.265
p.265
Simulation of Point-Defect Assisted Diffusion of Boron in RTA-Treated Silicon Wafers
p.271
p.271
Dopant Deactivation and Electrically Active Defects Induced in Silicon by CF4 and CBrF3 Plasma Etching
p.277
p.277
Simulation of Hydrogen Diffusion in n and p Type Silicon: Determination of Kinetic and Thermodynamic Parameters
Abstract:
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Periodical:
Solid State Phenomena (Volumes 19-20)
Pages:
253-258
Citation:
Online since:
January 1991
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Сopyright:
© 1991 Trans Tech Publications Ltd. All Rights Reserved
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