Simulation of Point-Defect Assisted Diffusion of Boron in RTA-Treated Silicon Wafers

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Periodical:

Solid State Phenomena (Volumes 19-20)

Edited by:

M. Kittler and H. Richter

Pages:

271-276

DOI:

10.4028/www.scientific.net/SSP.19-20.271

Citation:

H. Gdanitz and G. Ritter, "Simulation of Point-Defect Assisted Diffusion of Boron in RTA-Treated Silicon Wafers", Solid State Phenomena, Vols. 19-20, pp. 271-276, 1991

Online since:

January 1991

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$35.00

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