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HomeSolid State PhenomenaSolid State Phenomena Vols. 19-20Simulation of Point-Defect Assisted Diffusion of...

Simulation of Point-Defect Assisted Diffusion of Boron in RTA-Treated Silicon Wafers

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Gettering and Defect Engineering in Semiconductor Technology IV

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Periodical:

Solid State Phenomena (Volumes 19-20)

Pages:

271-276

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.19-20.271

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Online since:

January 1991

Authors:

H. Gdanitz, G. Ritter

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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