The Thermal Acceptor in Nitrogen Doped Cz Silicon
p.235
p.235
On Carbon-Implantation Induced Donors in Silicon
p.241
p.241
A Search on the Identity of the Ev+0.34 eV C-Related Defect in p-Si
p.247
p.247
Simulation of Hydrogen Diffusion in n and p Type Silicon: Determination of Kinetic and Thermodynamic Parameters
p.253
p.253
Hydrogen Passivation of Grain Boundaries in Polysilicon: Computer Simulation
p.259
p.259
Modification of the Properties of Si Crystals Exposed to Atomic Hydrogen at High Temperatures
p.265
p.265
Simulation of Point-Defect Assisted Diffusion of Boron in RTA-Treated Silicon Wafers
p.271
p.271
Dopant Deactivation and Electrically Active Defects Induced in Silicon by CF4 and CBrF3 Plasma Etching
p.277
p.277
Formation and Properties of Metastable Silicide Precipitates in Silicon
p.283
p.283
Hydrogen Passivation of Grain Boundaries in Polysilicon: Computer Simulation
Abstract:
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Periodical:
Solid State Phenomena (Volumes 19-20)
Pages:
259-264
Citation:
Online since:
January 1991
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Сopyright:
© 1991 Trans Tech Publications Ltd. All Rights Reserved
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