Dopant Deactivation and Electrically Active Defects Induced in Silicon by CF4 and CBrF3 Plasma Etching

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Periodical:

Solid State Phenomena (Volumes 19-20)

Edited by:

M. Kittler and H. Richter

Pages:

277-282

DOI:

10.4028/www.scientific.net/SSP.19-20.277

Citation:

Y.P. Baryshev et al., "Dopant Deactivation and Electrically Active Defects Induced in Silicon by CF4 and CBrF3 Plasma Etching", Solid State Phenomena, Vols. 19-20, pp. 277-282, 1991

Online since:

January 1991

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$35.00

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