Paper Titles

Dopant Deactivation and Electrically Active Defects Induced in Silicon by CF₄ and CBrF₃ Plasma Etching
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Formation and Properties of Metastable Silicide Precipitates in Silicon
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Mechanical Behaviour of Semiconductors in Terms of Dislocation Dynamics
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Dislocation Kink Dynamics and Gettering Processes in Semiconductors
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Local Distribution of Structure Defects Induced by Microhardness Indentation in GaAs
p.323

Dynamics of a Dislocation in the Potential Relief of Semiconductor Crystals under Varying Applied Forces
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Peculiarities of Dislocation Luminescence of Covalent Semiconductors
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Defects in Multicrystalline Silicon
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Origin of Recombination at Extended Defects: EBIC Contrast Experiments and Theory on Dislocations in GaAs
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HomeSolid State PhenomenaSolid State Phenomena Vols. 19-20Local Distribution of Structure Defects Induced by...

Local Distribution of Structure Defects Induced by Microhardness Indentation in GaAs

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Gettering and Defect Engineering in Semiconductor Technology IV

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Periodical:

Solid State Phenomena (Volumes 19-20)

Pages:

323-328

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.19-20.323

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Online since:

January 1991

Authors:

T. Wosiński, Otwin Breitenstein, Ch. Eisenschmidt, L. Fang

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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