Origin of Recombination at Extended Defects: EBIC Contrast Experiments and Theory on Dislocations in GaAs

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Periodical:

Solid State Phenomena (Volumes 19-20)

Edited by:

M. Kittler and H. Richter

Pages:

353-366

DOI:

10.4028/www.scientific.net/SSP.19-20.353

Citation:

B. Sieber "Origin of Recombination at Extended Defects: EBIC Contrast Experiments and Theory on Dislocations in GaAs", Solid State Phenomena, Vols. 19-20, pp. 353-366, 1991

Online since:

January 1991

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$35.00

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