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Paper Titles
Origin of Recombination at Extended Defects: EBIC Contrast Experiments and Theory on Dislocations in GaAs
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Electrical Properties of Dislocation Impurity Atmospheres in Si
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Electrical Properties of Defects in Multicrystalline Silicon
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Process Induced Defects in TiSi2-N+/P-Structures
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Evolution of Process - Induced Defects in Silicon under Hydrostatic Pressure
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Evolution of Monoclinic SiAs Precipitates in Heavily As+ Implanted and Isothermally Annealed Silicon
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Defect Structures in Si Preamorphized Wafers
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Behavior of Implanted Nitrogen in Si with the Buried Layer of SiO2 Precipitates
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Interaction of Implanted into Silicon Fluorine with Radiation Defects
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Evolution of Process - Induced Defects in Silicon under Hydrostatic Pressure

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Periodical:

Solid State Phenomena (Volumes 19-20)

Pages:

387-392

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.19-20.387

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Online since:

January 1991

Authors:

Andrzej Misiuk

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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