Paper Titles

Evolution of Process - Induced Defects in Silicon under Hydrostatic Pressure
p.387

Evolution of Monoclinic SiAs Precipitates in Heavily As⁺ Implanted and Isothermally Annealed Silicon
p.393

Defect Structures in Si Preamorphized Wafers
p.399

Behavior of Implanted Nitrogen in Si with the Buried Layer of SiO₂ Precipitates
p.405

Interaction of Implanted into Silicon Fluorine with Radiation Defects
p.411

Electrical Activity of Halogen-Silicon Complexes
p.417

Radiation Defect-Induced Optical Absorption of GaP
p.423

Synchrotron Radiation X-Ray Topography of Growth Striations in Magnetic-Field-Applied Czochralski Silicon
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Applications of In Situ Transmission Electron Microscopy to the Characterization of Process-Induced Defects
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HomeSolid State PhenomenaSolid State Phenomena Vols. 19-20Interaction of Implanted into Silicon Fluorine...

Interaction of Implanted into Silicon Fluorine with Radiation Defects

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Periodical:

Solid State Phenomena (Volumes 19-20)

Pages:

411-416

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.19-20.411

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Online since:

January 1991

Authors:

L.Ya. Krasnobaev, A.A. Malinin, V.V. Makarov, I.B. Sayapin

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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