Paper Titles

Electrical Properties of Defects in Multicrystalline Silicon
p.373

Process Induced Defects in TiSi₂-N⁺/P-Structures
p.379

Evolution of Process - Induced Defects in Silicon under Hydrostatic Pressure
p.387

Evolution of Monoclinic SiAs Precipitates in Heavily As⁺ Implanted and Isothermally Annealed Silicon
p.393

Defect Structures in Si Preamorphized Wafers
p.399

Behavior of Implanted Nitrogen in Si with the Buried Layer of SiO₂ Precipitates
p.405

Interaction of Implanted into Silicon Fluorine with Radiation Defects
p.411

Electrical Activity of Halogen-Silicon Complexes
p.417

Radiation Defect-Induced Optical Absorption of GaP
p.423

HomeSolid State PhenomenaSolid State Phenomena Vols. 19-20Defect Structures in Si Preamorphized Wafers

Defect Structures in Si Preamorphized Wafers

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Periodical:

Solid State Phenomena (Volumes 19-20)

Pages:

399-404

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.19-20.399

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Online since:

January 1991

Authors:

S. Prussin

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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