Paper Titles

Defects in Multicrystalline Silicon
p.341

Origin of Recombination at Extended Defects: EBIC Contrast Experiments and Theory on Dislocations in GaAs
p.353

Electrical Properties of Dislocation Impurity Atmospheres in Si
p.367

Electrical Properties of Defects in Multicrystalline Silicon
p.373

Process Induced Defects in TiSi₂-N⁺/P-Structures
p.379

Evolution of Process - Induced Defects in Silicon under Hydrostatic Pressure
p.387

Evolution of Monoclinic SiAs Precipitates in Heavily As⁺ Implanted and Isothermally Annealed Silicon
p.393

Defect Structures in Si Preamorphized Wafers
p.399

Behavior of Implanted Nitrogen in Si with the Buried Layer of SiO₂ Precipitates
p.405

HomeSolid State PhenomenaSolid State Phenomena Vols. 19-20Process Induced Defects in TiSi2-N+/P-Structures

Process Induced Defects in TiSi₂-N⁺/P-Structures

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology IV

Info:

Periodical:

Solid State Phenomena (Volumes 19-20)

Pages:

379-386

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.19-20.379

Citation:

Cite this paper

Online since:

January 1991

Authors:

H.B. Erzgräber, P. Zaumseil, E. Bugiel, R. Sorge, K. Tittelbach-Helmrich, F. Richter

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1991 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: