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Dynamics of a Dislocation in the Potential Relief of Semiconductor Crystals under Varying Applied Forces
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Peculiarities of Dislocation Luminescence of Covalent Semiconductors
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Defects in Multicrystalline Silicon
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Origin of Recombination at Extended Defects: EBIC Contrast Experiments and Theory on Dislocations in GaAs
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Electrical Properties of Dislocation Impurity Atmospheres in Si
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Electrical Properties of Defects in Multicrystalline Silicon
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Process Induced Defects in TiSi₂-N⁺/P-Structures
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Evolution of Process - Induced Defects in Silicon under Hydrostatic Pressure
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Evolution of Monoclinic SiAs Precipitates in Heavily As⁺ Implanted and Isothermally Annealed Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 19-20Electrical Properties of Dislocation Impurity...

Electrical Properties of Dislocation Impurity Atmospheres in Si

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Gettering and Defect Engineering in Semiconductor Technology IV

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Periodical:

Solid State Phenomena (Volumes 19-20)

Pages:

367-372

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.19-20.367

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Online since:

January 1991

Authors:

Eugene B. Yakimov, Nikolai Yarykin, Sergei V. Koveshnikov

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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