Electrical Properties of Dislocation Impurity Atmospheres in Si

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volumes 19-20)

Edited by:

M. Kittler and H. Richter

Pages:

367-372

DOI:

10.4028/www.scientific.net/SSP.19-20.367

Citation:

E. B. Yakimov et al., "Electrical Properties of Dislocation Impurity Atmospheres in Si", Solid State Phenomena, Vols. 19-20, pp. 367-372, 1991

Online since:

January 1991

Export:

Price:

$35.00

In order to see related information, you need to Login.