Paper Titles

Defect Structures in Si Preamorphized Wafers
p.399

Behavior of Implanted Nitrogen in Si with the Buried Layer of SiO₂ Precipitates
p.405

Interaction of Implanted into Silicon Fluorine with Radiation Defects
p.411

Electrical Activity of Halogen-Silicon Complexes
p.417

Radiation Defect-Induced Optical Absorption of GaP
p.423

Synchrotron Radiation X-Ray Topography of Growth Striations in Magnetic-Field-Applied Czochralski Silicon
p.429

Applications of In Situ Transmission Electron Microscopy to the Characterization of Process-Induced Defects
p.439

TEM Techniques for 2D Junction Delineation and Correlation with SIMS and SRP
p.449

Defect Generation in Cz-Silicon Used for the Design of Synchrotron Monochromator Crystals
p.455

HomeSolid State PhenomenaSolid State Phenomena Vols. 19-20Radiation Defect-Induced Optical Absorption of GaP

Radiation Defect-Induced Optical Absorption of GaP

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Periodical:

Solid State Phenomena (Volumes 19-20)

Pages:

423-428

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.19-20.423

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Online since:

January 1991

Authors:

C. Ascheron, H. Neumann, W. Hörig, G. Nooke

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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