Behavior of Implanted Nitrogen in Si with the Buried Layer of SiO2 Precipitates
p.405
p.405
Interaction of Implanted into Silicon Fluorine with Radiation Defects
p.411
p.411
Electrical Activity of Halogen-Silicon Complexes
p.417
p.417
Radiation Defect-Induced Optical Absorption of GaP
p.423
p.423
Synchrotron Radiation X-Ray Topography of Growth Striations in Magnetic-Field-Applied Czochralski Silicon
p.429
p.429
Applications of In Situ Transmission Electron Microscopy to the Characterization of Process-Induced Defects
p.439
p.439
TEM Techniques for 2D Junction Delineation and Correlation with SIMS and SRP
p.449
p.449
Defect Generation in Cz-Silicon Used for the Design of Synchrotron Monochromator Crystals
p.455
p.455
X-Ray Diffractometry and Topography of CdHgTe Bulk Crystals and CdHgTe-CdTe Epitaxial Structures
p.461
p.461
Synchrotron Radiation X-Ray Topography of Growth Striations in Magnetic-Field-Applied Czochralski Silicon
Abstract:
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Periodical:
Solid State Phenomena (Volumes 19-20)
Pages:
429-438
Citation:
Online since:
January 1991
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Сopyright:
© 1991 Trans Tech Publications Ltd. All Rights Reserved
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