Paper Titles

Hydrogen Passivation of Grain Boundaries in Polysilicon: Computer Simulation
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Modification of the Properties of Si Crystals Exposed to Atomic Hydrogen at High Temperatures
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Simulation of Point-Defect Assisted Diffusion of Boron in RTA-Treated Silicon Wafers
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Dopant Deactivation and Electrically Active Defects Induced in Silicon by CF₄ and CBrF₃ Plasma Etching
p.277

Formation and Properties of Metastable Silicide Precipitates in Silicon
p.283

Mechanical Behaviour of Semiconductors in Terms of Dislocation Dynamics
p.295

Dislocation Kink Dynamics and Gettering Processes in Semiconductors
p.311

Local Distribution of Structure Defects Induced by Microhardness Indentation in GaAs
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Dynamics of a Dislocation in the Potential Relief of Semiconductor Crystals under Varying Applied Forces
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HomeSolid State PhenomenaSolid State Phenomena Vols. 19-20Formation and Properties of Metastable Silicide...

Formation and Properties of Metastable Silicide Precipitates in Silicon

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Gettering and Defect Engineering in Semiconductor Technology IV

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Periodical:

Solid State Phenomena (Volumes 19-20)

Pages:

283-294

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.19-20.283

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Online since:

January 1991

Authors:

Michael Seibt, Wolfgang Schröter

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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