Implanted Photoresist Remover for Advanced Nodes Including SiGe, Ge and High K-Metals

Simon Braun; Rita Vos; Andreas Klipp; Martine Claes; Christian Bittner; Johan Albert; Naoto Horiguchi; Herbert Struyf

doi:10.4028/www.scientific.net/SSP.195.17

Paper Titles

Preface, Committees and Acknowledgements

Silicon & beyond CMOS: The Path of Advanced Electronic Structure Engineering for Low-Voltage Transistors
p.3

Cleaning Technology for Advanced Devices beyond 20 nm Node
p.7

Dummy Oxide Removal in High-K Last Process Integration how to Avoid Silicon Corrosion Issue
p.13

Implanted Photoresist Remover for Advanced Nodes Including SiGe, Ge and High K-Metals
p.17

Development of a Integrated Dry/Wet Hybrid Cleaning System
p.21

New Chemical Vapor Delivery Systems for Surface Cleaning
p.25

Removal of UV Cured Resin Using Hybrid Cleaning Method
p.30

Selective Nickel Silicide Wet Etchback Chemistry for Low Temperature Anneal Process
p.37

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Implanted Photoresist Remover for Advanced Nodes Including SiGe, Ge and High K-Metals

Abstract:

Cleaning photoresist from semiconductor wafers during the transistor formation in the front end of the line (FEOL) becomes more challenging with ever smaller nodes. First of all the resists do become more difficult to clean with decreasing node size, because implantation energy increase and the resist becomes more complex (to comply with the reduced wave length of the laser light for the lithography) at future node sizes. This results in more cross linked / polymerized photoresist, which is harder to (wet) strip. Additionally, the requirements on material compatibility of the cleaning solution increase, as more elements are used to build the transistor less than a monolayer of these materials can be removed during a single cleaning step.