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Development of a Integrated Dry/Wet Hybrid Cleaning System

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Abstract:

With scaling of ULSI devices, the process temperatures are continuously lowered. The oxide films, which were deposited at low temperature, show fast etching rates during wet etching compared to high temperature films. Also, the etch rates differ largely from other film deposition conditions. In order to overcome these etch rate differences during surface preparation, dry cleaning processes had been introduced where the etch selectivity of the soft oxide films to the thermal oxide are very similar, regardless of the film deposition conditions and the deposition temperature.

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Periodical:

Solid State Phenomena (Volume 195)

Pages:

21-24

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.195.21

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Online since:

December 2012

Authors:

Jong Seok Lee, Geun Min Choi, Ji Nok Jung, Dong Duk Lee, Gin Yung Hur, Jai Ho Lee, Che Hyuk Chi, Dae Hee Gimm

Keywords:

Dry-Wet, Fluorine Residue, Hybrid Clean, Wet-Dry

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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References

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DOI: 10.4028/www.scientific.net/ssp.65-66.165

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