Improved Drying Technology of Single Wafer Tool by Using Hot IPA/DIW

Chang Hyun Kim; Min Sang Yun; Tae Ho Hwang; Chang Hyeon Nam; Si Chul Kim; Jung Hun Roh; Mong Sup Lee; Jung Soo An

doi:10.4028/www.scientific.net/SSP.195.243

Paper Titles

Effect of the Surface/Water Chemistry on the Creation of Watermarks
p.227

Influence of Ammonia Gas Ambient in IPA Drying Process of the Single Wafer Cleaning System
p.231

Wetting Challenges in Cleaning of High Aspect Ratio Nano-Structures
p.235

Evaluation of High-Speed Linear Air-Knife Based Wafer Dryer
p.239

Improved Drying Technology of Single Wafer Tool by Using Hot IPA/DIW
p.243

Effects of Substrate Temperature on the Leaning of Micropatterns during Rinse-Dry Process
p.247

Advanced Vacuum Wafer Drying for Thermal Laser Separation Dicing Assessment Results from European Collaborative “SEAL” Project
p.252

Diffusion Behavior of Transition Metals Penetrating Silicon Substrate through Silicon Dioxides by Dopant Ion Implantation
p.261

Evaluation of Hafnium Contamination on Wafer Surfaces after the Wet Cleaning Process
p.265

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Improved Drying Technology of Single Wafer Tool by Using Hot IPA/DIW

Abstract:

As the DRAM design rule has been smaller, the leaning normally occurred in storage pattern with high aspect ratio also appears in STI (shallow trench isolation) pattern of sub 4Xnm device. IPA (isopropyl alcohol) showing the excellent ability to replace DIW (de-ionized water) is necessary in order to meet the leaning free condition, because the spin drying method cannot satisfy with leaning free condition.