Improved Drying Technology of Single Wafer Tool by Using Hot IPA/DIW

Abstract:

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As the DRAM design rule has been smaller, the leaning normally occurred in storage pattern with high aspect ratio also appears in STI (shallow trench isolation) pattern of sub 4Xnm device. IPA (isopropyl alcohol) showing the excellent ability to replace DIW (de-ionized water) is necessary in order to meet the leaning free condition, because the spin drying method cannot satisfy with leaning free condition.

Info:

Periodical:

Solid State Phenomena (Volume 195)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

243-246

Citation:

C. H. Kim et al., "Improved Drying Technology of Single Wafer Tool by Using Hot IPA/DIW", Solid State Phenomena, Vol. 195, pp. 243-246, 2013

Online since:

December 2012

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Price:

$38.00

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