Diffusion Behavior of Transition Metals Penetrating Silicon Substrate through Silicon Dioxides by Dopant Ion Implantation

Abstract:

Metallic contamination on silicon surfaces has a detrimental impact on ULSI device performance and yield. Surface metal impurities degrade gate oxide integrity while metal impurities dissolved in silicon cause recombination centers and result in junction leakage. Surface metal impurities penetrate silicon by the colliding with dopant during ion implantation and are also diffused in silicon by subsequent annealing [. The diffusion behavior of metal impurities in silicon is well-known [. While metal impurities often penetrate silicon through the silicon oxide in ULSI processing, little work has been reported on the diffusion behavior of metal impurities penetrating silicon oxide. We demonstrated the diffusion behavior of metal impurities penetrating silicon substrates with different thickness of silicon oxide by the collision with dopant during ion implantation.

• Periodical: Solid State Phenomena (Volume 195)
• Pages: 261-264
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.195.261
• Online since: December 2012
• Authors: Koichiro Saga
• Keywords: Diffusion, Ion Implantation, Metal Contamination, Minority Carrier Lifetime

References

[1] K. Saga, K. Ueno, and R. Ohno, Quantitative Analysis of Transition Metals Penetrating the Silicon Substrate by Dopant Ion Implantation, in Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11, ECS transactions, vol. 25, no. 5, p.375.

DOI: 10.1149/1.3202676

[2] E. R. Weber, Transition metals in Silicon, Appl. Phys. A, 30, pp.1-20 (1983).

[3] D. K. Schroder, IEEE Trans. Electron. Dev., 44, 160 (1997).

[4] J. D. McBrayer et al., J. Electrochem. Soc., 133, 1242(1986).

[5] K. Saga, Gettering behavior of transition metals in low energy, high dose ion implanted silicon, in Solid State Phenomena, Vol. 187, pp.283-286, Trans Tech Publications, Switzerland (2012).

DOI: 10.4028/www.scientific.net/ssp.187.283