Wet-Chemical Conditioning of H-Terminated Silicon Solar Cell Substrates Investigated by Surface Photovoltage Measurements

Heike Angermann; U. Stürzebecher; J. Kegel; C. Gottschalk; K. Wolke; Abdelazize Laades; E. Conrad; C. Klimm; B. Stegemann

doi:10.4028/www.scientific.net/SSP.195.301

Paper Titles

Cleaning in Crystalline Si Solar Cell Manufacturing
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How to Overcome the Effects of Silicon Build-Up during Solar Cell Wet Chemical Processing
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'Just Clean Enough': Wet Cleaning for Solar Cell Manufacturing Applications
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Optimized Wet Processes and PECVD for High-Efficiency Solar Cells
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Wet-Chemical Conditioning of H-Terminated Silicon Solar Cell Substrates Investigated by Surface Photovoltage Measurements
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Combined Ozone/HF/HCI Based Cleaning and Adjusted Emitter Etch-Back for Silicon Solar Cells
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Wet Chemical Oxidation of Silicon Surfaces Prior to the Deposition of All-PECVD AlO_x/a-SiN_x Passivation Stacks for Silicon Solar Cells
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Surface Charge and Interface State Density on Silicon Substrates after Ozone Based Wet-Chemical Oxidation and Hydrogen-Termination
p.314

Aspects of Surface Conditioning for High-Efficient Hetero-Junction Silicon Solar Cells
p.318

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Wet-Chemical Conditioning of H-Terminated Silicon Solar Cell Substrates Investigated by Surface Photovoltage Measurements

Abstract:

For further enhancement of solar energy conversion efficiency the passivation of silicon (Si) substrate surfaces and interfaces of Si-based solar cell devices is a decisive precondition to reduce recombination losses of photogenerated charge carriers. These losses are mainly controlled by surface charges, the density and the character of rechargeable interface states (D_it) [], which are induced by defects localised in a small interlayer extending over only few Å. Therefore, the application of fast non-destructive methods for characterization of the electronic interface properties directly during the technological process has received an increasing interest in recent years.