Wet-Chemical Conditioning of H-Terminated Silicon Solar Cell Substrates Investigated by Surface Photovoltage Measurements

Abstract:

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For further enhancement of solar energy conversion efficiency the passivation of silicon (Si) substrate surfaces and interfaces of Si-based solar cell devices is a decisive precondition to reduce recombination losses of photogenerated charge carriers. These losses are mainly controlled by surface charges, the density and the character of rechargeable interface states (Dit) [], which are induced by defects localised in a small interlayer extending over only few Å. Therefore, the application of fast non-destructive methods for characterization of the electronic interface properties directly during the technological process has received an increasing interest in recent years.

Info:

Periodical:

Solid State Phenomena (Volume 195)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

301-304

Citation:

H. Angermann et al., "Wet-Chemical Conditioning of H-Terminated Silicon Solar Cell Substrates Investigated by Surface Photovoltage Measurements", Solid State Phenomena, Vol. 195, pp. 301-304, 2013

Online since:

December 2012

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