Wet-Chemical Conditioning of H-Terminated Silicon Solar Cell Substrates Investigated by Surface Photovoltage Measurements
For further enhancement of solar energy conversion efficiency the passivation of silicon (Si) substrate surfaces and interfaces of Si-based solar cell devices is a decisive precondition to reduce recombination losses of photogenerated charge carriers. These losses are mainly controlled by surface charges, the density and the character of rechargeable interface states (Dit) , which are induced by defects localised in a small interlayer extending over only few Å. Therefore, the application of fast non-destructive methods for characterization of the electronic interface properties directly during the technological process has received an increasing interest in recent years.
Paul Mertens, Marc Meuris and Marc Heyns
H. Angermann et al., "Wet-Chemical Conditioning of H-Terminated Silicon Solar Cell Substrates Investigated by Surface Photovoltage Measurements", Solid State Phenomena, Vol. 195, pp. 301-304, 2013