Wet Chemical Oxidation of Silicon Surfaces Prior to the Deposition of All-PECVD AlOx/a-SiNx Passivation Stacks for Silicon Solar Cells

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Abstract:

Aluminum oxide (AlOx) is currently under intensive investigation for use in surface passivation schemes in solar cells. AlOx films contain negative charges and therefore generate an accumulation layer on p-type silicon surfaces, which is very favorable for the rear side of p-type silicon solar cells as well as the p+-emitter at the front side of n-type silicon solar cells. However, it has been reported that quality of an interfacial silicon sub-oxide layer (SiOx), which is usually observed during deposition of AlOx on Silicon, strongly impacts the silicon/AlOx interface passivation properties [1]. The present work demonstrates that a convenient way to control the interface is to form thin wet chemical oxides of high quality prior to the deposition of AlOx/a-SiNx:H stacks by the plasma enhanced chemical vapor deposition (PECVD).

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Periodical:

Solid State Phenomena (Volume 195)

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310-313

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December 2012

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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[2] www. roth-rau. de/konzern/roth/datenbanken_de/produkte.

Google Scholar

[3] Laades et al, On the impact of the interfacial SiOx-layer on the passivation properties of PECVD synthesized Aluminum oxide, accepted for publication in physica status solidi c, manuscript number: pssc. 201200244. R1.

DOI: 10.1002/pssc.201200244

Google Scholar

[4] H. Angermann, Applied Surface Science 254, 8067 (2008).

Google Scholar

[5] Vitanov et al, Thin Solid Films 517 (2009) 6327.

Google Scholar

[6] Katamreddy et al, Journal of The Electrochemical Society 153 (2006) C701.

Google Scholar

[7] Y-C. Kim et al, " Thin Solid Films 237 (1994) 27.

Google Scholar

[8] Lucovsky et al, J. Vac. Sci. Technol. 19 (1981) 456.

Google Scholar

[9] Laades et al, Detailed investigation of the structural and passivation properties of silicon oxynitrides for silicon solar cells, accepted for publication in physica status solidi c, manuscript number: pssc. 201200245. R1.

DOI: 10.1002/pssc.201200245

Google Scholar