Wet Chemical Oxidation of Silicon Surfaces Prior to the Deposition of All-PECVD AlOx/a-SiNx Passivation Stacks for Silicon Solar Cells

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Aluminum oxide (AlOx) is currently under intensive investigation for use in surface passivation schemes in solar cells. AlOx films contain negative charges and therefore generate an accumulation layer on p-type silicon surfaces, which is very favorable for the rear side of p-type silicon solar cells as well as the p+-emitter at the front side of n-type silicon solar cells. However, it has been reported that quality of an interfacial silicon sub-oxide layer (SiOx), which is usually observed during deposition of AlOx on Silicon, strongly impacts the silicon/AlOx interface passivation properties [1]. The present work demonstrates that a convenient way to control the interface is to form thin wet chemical oxides of high quality prior to the deposition of AlOx/a-SiNx:H stacks by the plasma enhanced chemical vapor deposition (PECVD).

Info:

Periodical:

Solid State Phenomena (Volume 195)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

310-313

Citation:

A. Laades et al., "Wet Chemical Oxidation of Silicon Surfaces Prior to the Deposition of All-PECVD AlOx/a-SiNx Passivation Stacks for Silicon Solar Cells", Solid State Phenomena, Vol. 195, pp. 310-313, 2013

Online since:

December 2012

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$38.00

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[3] Laades et al, On the impact of the interfacial SiOx-layer on the passivation properties of PECVD synthesized Aluminum oxide, accepted for publication in physica status solidi c, manuscript number: pssc. 201200244. R1.

DOI: https://doi.org/10.1002/pssc.201200244

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[9] Laades et al, Detailed investigation of the structural and passivation properties of silicon oxynitrides for silicon solar cells, accepted for publication in physica status solidi c, manuscript number: pssc. 201200245. R1.

DOI: https://doi.org/10.1002/pssc.201200245