A Comparative Study for the Backside Illumination (BSI) Technology Using Bonding Wafer Cleaning Process for Advanced CMOS Image Sensor

Abstract:

Article Preview

Over the last decades, the concept of backside illumination (BSI) sensors has become one of the leading solutions to optical challenges such as improved quantum efficiency (QE), and cross-talk, respectively [1-. Direct wafer bonding is a method for fabricating advanced substrates for micro-electrochemical systems (MEMS) and integrated circuits (IC). The most typical example of such an advanced substrate is the silicon-on-insulator (SOI) wafer.

Info:

Periodical:

Solid State Phenomena (Volume 195)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

75-78

Citation:

C. K. Jung et al., "A Comparative Study for the Backside Illumination (BSI) Technology Using Bonding Wafer Cleaning Process for Advanced CMOS Image Sensor", Solid State Phenomena, Vol. 195, pp. 75-78, 2013

Online since:

December 2012

Export:

Price:

$38.00

[1] Y. Backlund, K. Ljungberg, and A. Soderbarg, J. Micromech. Microeng. 2 (1992) 158.

[2] R.M. Guidash et al, IEDM Tech. (1997) 927.

[3] J. Vaillant and F. Hirigoyen, Pros. of SPIE, 5459 (2004) 200.

[4] M. Shimbo, K. Furukawa, and K. Tanazawa, J. Appl. Phys. 60 (1986) 2987.

[5] W.P. Maszara, G. Goetz, A. Caviglia, and J.B. McKitterick, J. Appl. Phys. 64 (1988), 4943.