A Comparative Study for the Backside Illumination (BSI) Technology Using Bonding Wafer Cleaning Process for Advanced CMOS Image Sensor

Chung Kyung Jung; Sung Wook Joo; Seoung Hun Jeong; Sang Wook Ryu; Han Choon Lee; Jin Youn Cho; Gun Woo Park; Yeon Jong Lee; Yong Won Cha; Jae Won Han

doi:10.4028/www.scientific.net/SSP.195.75

Paper Titles

SiO₂ Etch Rate Modification by Ion Implantation
p.55

Surface Preparations Impact on 248nm Deep UV Photo Resists Adhesion during a Wet Etch
p.58

Chemical Control of Surfaces: From Fundamental Understanding to Practical Application
p.65

Surface Preparation of Poly-Si Using Dry Cleaning for Minimizing Interfacial Resistance
p.71

A Comparative Study for the Backside Illumination (BSI) Technology Using Bonding Wafer Cleaning Process for Advanced CMOS Image Sensor
p.75

Clean Process Mechanism of HKMG during N-PMOS Patterning
p.79

Study of Highly Selective and Sensitive Microarray Structure Based on Hydrophilic/Hydrophobic SAMs (Self-Assembled Monolayers)
p.82

Evaluation of CD Fluctuation on QC Monitor
p.86

In Situ Studies of III-V Surfaces and High-K Atomic Layer Deposition
p.90

HomeSolid State PhenomenaSolid State Phenomena Vol. 195A Comparative Study for the Backside Illumination...

A Comparative Study for the Backside Illumination (BSI) Technology Using Bonding Wafer Cleaning Process for Advanced CMOS Image Sensor

Abstract:

Over the last decades, the concept of backside illumination (BSI) sensors has become one of the leading solutions to optical challenges such as improved quantum efficiency (QE), and cross-talk, respectively [1-. Direct wafer bonding is a method for fabricating advanced substrates for micro-electrochemical systems (MEMS) and integrated circuits (IC). The most typical example of such an advanced substrate is the silicon-on-insulator (SOI) wafer.