Defect Control in Zinc Oxynitride Semiconductor for High-Performance and High-Stability Thin-Film Transistors

Hyun Suk Kim; Joon Seok Park; Tae Sang Kim; Kyoung Seok Son; Jong Baek Seon; Seok Jun Seo; Sun Jae Kim; Sun Hee Lee; Eok Su Kim; Myoung Kwan Ryu; Seung Wu Han; Seong Ho Cho; Young Soo Park

doi:10.4028/www.scientific.net/SSP.205-206.446

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HomeSolid State PhenomenaSolid State Phenomena Vols. 205-206Defect Control in Zinc Oxynitride Semiconductor...

Defect Control in Zinc Oxynitride Semiconductor for High-Performance and High-Stability Thin-Film Transistors

Abstract:

The fabrication of thin-film transistor devices incorporating active semiconductors based on zinc oxynitride (ZnON) compound is presented. It is demonstrated that the addition of appropriate dopant, gallium, in ZnON, suppresses the formation of shallow donor, nitrogen vacancies, and significantly improves electrical characteristics of the resulting TFT. The Ga:ZnON devices with field-effect mobility values exceeding 50 cm²/Vs are achieved, which makes them suitable as switching or driving elements in next-generation flat-panel displays.

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Periodical:

Solid State Phenomena (Volumes 205-206)

Pages:

446-450

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.205-206.446

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Online since:

October 2013

Authors:

Hyun Suk Kim, Joon Seok Park, Tae Sang Kim, Kyoung Seok Son, Jong Baek Seon, Seok Jun Seo, Sun Jae Kim, Sun Hee Lee, Eok Su Kim, Myoung Kwan Ryu, Seung Wu Han, Seong Ho Cho, Young Soo Park

Keywords:

First-Principles Calculation, Flat Panel Display, Oxynitride, TFT

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