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HomeSolid State PhenomenaSolid State Phenomena Vols. 205-206Silicon and Oxygen in High-Al-Content AlGaN:...

Silicon and Oxygen in High-Al-Content AlGaN: Incorporation Kinetics and Electron Paramagnetic Resonance Study

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Abstract:

The high-Al-content Al_xGa_1-xN alloys, x>0.70, and AlN is the fundamental wide-band-gap material system associated with the technology development of solid-state LEDs operating at the short wavelengths in the deep-UV (λ < 280 nm). Yet, their properties are insufficiently understood. The present study is intended to bring elucidation on the long-time debated and much speculated Si transition from shallow donor in GaN to a localized deep DX defect in Al_xGa_1-xN alloys with increasing Al content. For that purpose electron paramagnetic resonance is performed on a particular selection of high-Al-content epitaxial layers of Al_0.77Ga_0.23N, alternatively Al_0.72Ga_0.28N, alloy composition.

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Periodical:

Solid State Phenomena (Volumes 205-206)

Pages:

441-445

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.205-206.441

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Online since:

October 2013

Authors:

Anelia Kakanakova-Georgieva, Daniel Nilsson, Xuan Thang Trinh, Nguyen Tien Son, Erik Janzén

Keywords:

AlGaN, Electron Paramagnetic Resonance (EPR), MOCVD, Si Doping

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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