Collection Efficiency of Noble Metallic Contaminants on Si Wafers with HF-Aqua Regia Mixtures for VPD-DC ICPMS Analysis

Article Preview

Abstract:

of several new materials in clean rooms, the monitoring of trace metallic contamination is a real and present need. It is well known [1][2][3] that these impurities are detrimental to the efficiency of the microelectronics devices: they could cause crystal defects, act as electron traps, degrade minority carrier lifetime or increase the leakage current. Concerning the noble metallic contaminants (Au, Pt, Ir, Ru, Ag and Pd), now used in microelectronics to improve devices performances, their surface contamination control at low level (< 1010 at.cm-2) remains a great challenge.

You might also be interested in these eBooks

Info:

Periodical:

Solid State Phenomena (Volume 219)

Pages:

268-271

Citation:

Online since:

September 2014

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2015 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] J-S. Kim and al., Cleaning Efficiencies of Various Chemical Solutions for Noble Metals such as Cu, Ag and Au on Si wafers Surface, Journal of the Electrochemical Society, 146 (1999) 4281-4289.

DOI: 10.1149/1.1392628

Google Scholar

[2] G. Buhrer, Application of VPD TXRF in the silicon semiconductor manufacturing environment, Spectrochimica Acta Part B: Atomic Spectroscopy, 54 (1999) 1399-1407.

DOI: 10.1016/s0584-8547(99)00084-1

Google Scholar

[6] H. Fontaine, D. Hureau, M. Groz, D. Despois and C. Louis, Analysis of the Noble Metals on Silicon Wafers by Chemical Collection and ICPMS, American Institute of Physics, 1395 (2011) 222-226.

DOI: 10.1063/1.3657895

Google Scholar

[4] M. Devita, H. Fontaine, N. Drogue, D. Mathiot, D. Despois, V. Enyedi, T. Lardin, Improvements in VPD-DC for characterization of the noble metallic contamination on Si wafers, 13th SEMATECH Surface Preparation and Cleaning Conference, Austin – Texas, USA, April 22-24, (2014).

DOI: 10.4028/www.scientific.net/ssp.219.268

Google Scholar

[5] D. Hellin, N. Valcks, J. Rip, Investigation of metallic contamination analysis using VPD-DC-TXRF for Pt-group elements on silicon wafers, Solid State Phenomena, 134 (2008) 273-276.

DOI: 10.4028/www.scientific.net/ssp.134.273

Google Scholar

[6] H. Fontaine, Analysis of trace noble metals on the wafer surface and bevel by liquid phase collection and ICPMS, 15th ARCIS meeting on Characterization Methods for Microelectronics and Photovoltaics, Gardanne, France, November 28-29, (2012).

Google Scholar

[7] M. Yamagami, A. Ikeshita, Y. Onizuka and al., Development of VPD-TXRF spectrometer, Spectrochimica Acta Part B: Atomic Spectroscopy, 58 (2003) 2079-(2084).

DOI: 10.1016/s0584-8547(03)00227-1

Google Scholar

[8] A. Danel, T. Lardin, C. Giroud and F. Tardif, Contribution for the optimization of VPD technique, Materials Science & Engineering B, 102 (2003) 213-217.

DOI: 10.1016/s0921-5107(02)00713-4

Google Scholar