Effect of FOUP Atmosphere Control on Process Wafer Integrity in Sub20 nm Device Fabrication

Bong Ho Kim; Jin Goo Park

doi:10.4028/www.scientific.net/SSP.219.256

Paper Titles

Scaling the 3D Bumps Pitch from 20 to 10 μm, Focusing on the Wet Cu Seed Etch Process Development
p.237

Adhesion Improvement through Plasma Surface Treatments on Palladium Surface
p.241

Control of HF Volatile Contamination in FOUP Environment by Advanced Polymers and Clean Gas Purge
p.247

FOUP Material Influence on HF Contamination during Queue-Time
p.251

Effect of FOUP Atmosphere Control on Process Wafer Integrity in Sub20 nm Device Fabrication
p.256

Correlation of Cleaning Conditions and Wafer Out-Gassing
p.260

Quantitative Analysis of Transition Metals Penetrating Silicon Substrate through SiN Film by Dopant Ion Implantation and Annealing
p.265

Collection Efficiency of Noble Metallic Contaminants on Si Wafers with HF-Aqua Regia Mixtures for VPD-DC ICPMS Analysis
p.268

Backside and Bevel Contamination Removal
p.272

HomeSolid State PhenomenaSolid State Phenomena Vol. 219Effect of FOUP Atmosphere Control on Process Wafer...

Effect of FOUP Atmosphere Control on Process Wafer Integrity in Sub20 nm Device Fabrication

Abstract:

Defects could be generated on the wafers by the particle contamination, formation of organic residue, corrosion, native oxide growth on the surface and airborne molecular contaminants (AMC) [1] etc. These problems hinder the device performance and also can decrease the yield and productivity in the semiconductor manufacturing process. It could be resolved by various cleaning methods [2]. However, the results such as corrosion, native oxide growth on wafer and AMC deposition should be handled properly by N₂ gas purge prevention method during the process or standby [3,4]. It should be implemented before starting the process, which can maximize the productivity with a higher yield by minimizing the process queue and maintaining wafer surface integrity in sub 20 nm device fabrication.

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Periodical:

Solid State Phenomena (Volume 219)

Pages:

256-259

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.219.256

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Online since:

September 2014

Authors:

Bong Ho Kim*, Jin Goo Park

Keywords:

Corrosion, FOUP, N₂ Purge, Process Queue

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References

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